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研究了a SiNx∶H薄膜中不同氮含量样品的室温光致发光。当x≥ 0 .5时 ,在室温下观察到了较强的室温荧光 ,而且随氮含量增加 ,发光峰能量与强度不断增加。首次发现在富硅 (x≤ 1.3)样品中存在两种荧光机制 ,其临界值位于x =0 .8。当x≤ 0 .8时 ,样品表现为与a Si∶H类似的荧光特性及温度特性 ;当x >0 .8时 ,荧光强度和峰位均有大的增加 ,归一化后的低温和室温的荧光谱几乎完全重合。最后 ,采用量子限制模型并结合渗流理论解释了实验现象。
Room temperature photoluminescence of samples with different nitrogen contents in a SiNx:H films was investigated. When x≥0.5, strong room temperature fluorescence was observed at room temperature. With the increase of nitrogen content, the energy and intensity of the luminescence peak increased. For the first time, two fluorescence mechanisms exist in silicon-rich (x≤1.3) samples with a critical value at x = 0.8. When x≤0.8, the samples showed fluorescence and temperature characteristics similar to a Si:H. When x> 0.8, the fluorescence intensities and peak positions increased greatly. The normalized low temperature and Fluorescence spectra at room temperature almost completely coincide. Finally, we use the quantum confinement model and the seepage theory to explain the experimental phenomena.