本工作利用椭偏光谱法研究Pt-Si系统的界面状况,结果指出,未经任何热处理的Pt/n-Si样品的界面上存在着一性质上异于Si衬底和Pt膜的界面层,但经700℃退火(固相反应)形成硅化物PtSi后,原来的界面层消失.另外,由椭偏光谱测量,本工作获得了PtSi薄膜的光学性质,这些光学性质可由Lorentz-Drude模型而得到比较好的解释,该模型包含了三项具有不同的共振能量的束缚电子项及一项自由电子项的贡献. In this work, the interface condition of the Pt-Si system was studied by ellipsometry. The results show that there is an interface layer between the Pt / n-Si sample and the Si substrate and the Pt film without any heat treatment, However, the original interfacial layer disappeared after the formation of the silicide PtSi by annealing at 700 ° C. In addition, the optical properties of the PtSi thin films were obtained by ellipsometry, and these optical properties were obtained from the Lorentz-Drude model For a better explanation, the model includes three contributions of bound electrons with a different resonance energy and a free electron.