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半导体抽运碱金属蒸气激光器(DPAL)是具有潜力的新型高能激光光源,高功率抽运条件下,铷原子会发生电离,对激光器性能产生负面影响。铷原子主要电离通道之一是抽运光谱(中心波长780 nm)和远翼776 nm成分引起的5S→5P→5D的级联效应以及后续的光电离过程。为了定量测量铷DPAL电离度,需要搭建窄线宽776 nm高功率半导体光源以模拟780 nm抽运光的远翼光谱成分。基于Littrow结构实现了窄线宽776 nm半导体激光输出,激光线宽小于0.15 nm,功率大于10 W,外腔效率为67%;利用该激光器进行了780 nm和776 nm级联抽运实验,观察到显著增强的荧光信号。
Semiconductor pumping alkali metal vapor laser (DPAL) is a potential new high-energy laser light source, high-power pumping conditions, the rubidium atoms ionizing, have a negative impact on laser performance. One of the main ionization channels of rubidium atoms is the cascade effect of 5S → 5P → 5D caused by the pumping spectrum (center wavelength of 780 nm) and the far 776 nm component, and the subsequent photoionization process. In order to quantitatively measure the DPAL ionization degree of rubidium, it is necessary to construct a narrow-linewidth 776 nm high-power semiconductor light source to simulate the far-field spectral components of 780 nm pumping light. Based on the Littrow structure, a 776 nm laser with narrow linewidth is realized. The laser linewidth is less than 0.15 nm, the power is greater than 10 W and the external cavity efficiency is 67%. The cascade pumping experiments at 780 nm and 776 nm were performed and observed To significantly enhanced fluorescence signal.