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我们应用X光电子能谱(XPS)分别对甲基硅树脂、三甲基硅基化硅树脂、甲基硅胶橡、甲基苯基硅胶橡以及石英粉等试样进行了Si_(2P)、O_(1S)和相C_(1S)电子能级的测定。Si_(29)谱对处于不同环境的硅原子具有一定的分辨率。实验方法测试仪器为AEI ES-200B型电子能谱仪。以MgK_(α_(1,2)作激发源(能量1253.6eV),缝宽0.2”,X光功率12KV×3mA左右,采用FAT方式扫描,为校正荷电效应等,以C_(1S)能级作基准。在测定过程中,由于无机硅化合物的C_(1S)谱,其吸附的碳元素的状态较复杂,不便直接以其
X-ray photoelectron spectroscopy (XPS) was used to study the effects of Si 2P, O_ (1S) and phase C_ (1S) electron level determination. The spectrum of Si_ (29) has certain resolution for silicon atoms in different environments. Experimental methods Test equipment for the AEI ES-200B-type electron spectrometer. Using MgK_ (1,2) as excitation source (energy of 1253.6 eV), slit width of 0.2 ", X-ray power of 12KV × 3mA and scanning by FAT mode, the C_ (1S) As a benchmark in the determination process, due to C_ (1S) spectrum of inorganic silicon compounds, the state of its adsorption of carbon elements is more complex, inconvenience directly with its