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垂直磁记录材料需要高的磁晶各向异性能。尝试了通过改变缓冲层成分来产生晶格畸变以提高磁晶各向异性的方法。300℃下,利用直流磁控溅射设备在RuV缓冲层上沉积了Co0.85W0.15磁性薄膜,其中Ru缓冲层中添加15%V。利用X射线衍射(XRD)分析了薄膜的精细晶体结构,确定了薄膜的结构、取向关系、晶格常数、c轴分散性、fcc/hcp体积分数比和堆垛层错密度。根据实验结果,研究了Co0.85W0.15/Ru0.85V0.85/MgO(111)薄膜的晶体结构和磁晶各向异性能间的关系。实验结果表明,由于缓冲层中V的添加,晶格常数比降低,显著提高了Co0.85W0.15薄膜的磁晶各向异性。因此,可以通过缓冲层的成分设计实现不同磁性材料的磁晶各向异性。
Vertical magnetic recording materials require high magnetocrystalline anisotropy energy. Attempts have been made to increase the magnetocrystalline anisotropy by changing the composition of the buffer layer to generate lattice distortion. At 300 ℃, a Co0.85W0.15 magnetic thin film was deposited on the RuV buffer layer by a DC magnetron sputtering device, in which 15% V was added to the Ru buffer layer. The crystal structure of the films was analyzed by X-ray diffraction (XRD). The structure, orientation, lattice constant, c-axis dispersion, fcc / hcp volume fraction and stacking fault density of the films were determined. According to the experimental results, the relationship between the crystal structure and the magnetocrystalline anisotropy of Co0.85W0.15 / Ru0.85V0.85 / MgO (111) thin films was studied. The experimental results show that due to the addition of V in the buffer layer, the lattice constant ratio decreases, and the magnetocrystalline anisotropy of the Co0.85W0.15 thin film is significantly increased. Therefore, the magnetocrystalline anisotropy of different magnetic materials can be realized through the composition design of the buffer layer.