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一、引 言 GaAs-GaAlAs双异质结激光器(以下简称 GaAlAs DH激光器)的退化是人们很关心的问题.现在看来,器件退化主要有二种形式:快退化和慢退化.GaAlAs DH激光器有源区暗线的增长是器件快退化的主要原因之一.暗线的形成一般在几分钟到几十小时,因此在器件短期老化后如能方便地对器件内部发光情况进行观察并结合进行如阈值、微分量子效率、热阻、伏安特性等测试,将有助于器件退化原因的分析,有利于改进外延与制
I. INTRODUCTION Degradation of GaAs-GaAlAs double heterojunction laser (hereinafter referred to as GaAlAs DH laser) is one of the most concerned issues.Now it seems that there are mainly two forms of device degradation: fast degeneration and slow degeneration.GaAlAs DH laser active The growth of dark line in the area is one of the main reasons for the rapid degeneration of the device.The dark line is usually formed in a few minutes to several dozens of hours so that after the device has been aged for a short period of time it is convenient to observe the internal light emission of the device and combine such as threshold, Quantum efficiency, thermal resistance, volt-ampere characteristics and other tests, will contribute to the analysis of the causes of device degradation, is conducive to improving the extension and system