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介绍了Ｘ波段１．５Ｗ ＧａＡｓＭＭＩＣ的设计、制作和性能测试，包括ＭＥＳＦＥＴ大信号模型的建立、电路ＣＡＤ优化、ＤＯＥ灵敏度分析及Ｔ型栅工艺研究等。微波测试结果为： 在频率９．４～１０．２ＧＨｚ下， 输出功率大于３２ｄＢｍ ， 增益大于１０ｄＢ。
The design, manufacture and performance testing of X-band 1.5W GaAsMMIC are introduced, including the establishment of MESFET large signal model, the optimization of circuit CAD, the DOE sensitivity analysis and the research of T-type gate technology. The result of the microwave test is: under the frequency of 9.4 ~ 10.2GHz, the output power is greater than 32dBm and the gain is greater than 10dB.