论文部分内容阅读
一、 引言 低温能避免高温引起的杂质再分布,杂质表面耗尽,“鸟嘴”结构形成,以及硅片翘曲和热诱生缺陷等,保证高密度IC的实现。硅的低温氧化,是VLSI制作中尚未解决的重要课题,因此引起了人们很大关注。本工作采用低温等离子体技术,研究了900℃以下硅的等离子体氧化,探讨了膜的生长机理和规律,膜的性质与工艺条件的关系。
I. INTRODUCTION Low temperature can avoid the redistribution of impurity caused by high temperature, the surface of impurity is exhausted, the structure of “beak” is formed, as well as the warpage of silicon and heat-induced defects to ensure the realization of high-density IC. Low temperature oxidation of silicon is an important issue that has not yet been solved in VLSI fabrication and has drawn great attention. In this work, low temperature plasma technology was used to study the plasma oxidation of silicon below 900 ℃. The mechanism and rule of the growth of the film were discussed. The relationship between the film properties and the process conditions was discussed.