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2月11日,SanDisk和东芝公司宣布两公司使用32nm处理技术生产出32GB 3 bits/单元(3-bits-per-cell)(X3)存储芯片,共同开发出多层式芯片(MLC)NAND快闪存储器。该项突破预期将很快为从存储卡到固态硬盘(SSD)等市场带来能够提高产品容量、降低制造成本的先进技术。“在推出56nm 3 bits/单元的第一代产品后的一年半时间里,
On February 11, SanDisk and Toshiba announced that the two companies are using 32nm processing technology to produce 32GB 3-bits-per-cell (X3) memory chips to jointly develop multi-level chip (MLC) NAND fast Flash memory. This breakthrough is expected soon to bring advanced technologies that boost product capacity and lower manufacturing costs from memory cards to solid state drives (SSDs). ”In the year and a half after launching the first generation of 56nm 3 bits / cell,