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用离子注入Hg_(0.71)Cd_(0.29)Te形成的n—p结,其结构存在有离子注入损伤。在受主浓度为4×10~(16)cm~(-3)的p型衬底上,用Ar、B、Al和P离子注入,已制备出n—p结光电二极管。当注入剂量在10~(13)—5×10~(14)cm~(-2)范围内时,注入n型层的特点是薄层电子浓度为10~(14)—10~(15)cm~(-2),电子迁移率高于10~3cm~2V~(-1)s~(-1)。光电二极管截止波长为5.2μm,量子效率高于80%。77K时,动态电阻与表面积的乘积大于2000 Ω·cm~2。详细地研究了动态电阻对温度的依赖关系,结电容与反向电压的关系符合线性缓变结模型。用栅—控二极管对77K时的反向电流特性进行了研究。结果表明,对于表面电位的两极来说,反向击穿是由表面处场—感应结内的带问隧道决定的。
The n-p junction formed by ion implantation of Hg_ (0.71) Cd_ (0.29) Te has ion implantation damage in its structure. N-p junction photodiodes have been fabricated on p-type substrates with acceptor concentrations of 4 × 10 ~ (16) cm ~ (-3) by Ar, B, Al and P ion implantation. When the implantation dose is in the range of 10 ~ (13) -5 × 10 ~ (14) cm ~ (-2), the n - type layer is characterized by the thin film electron concentration of 10 ~ (14) -10 ~ (15) cm ~ (-2), the electron mobility is higher than 10 ~ 3cm ~ 2V ~ (-1) s ~ (-1). The photodiode has a cut-off wavelength of 5.2 μm and a quantum efficiency higher than 80%. At 77K, the product of dynamic resistance and surface area is greater than 2000 Ω · cm ~ 2. The dependence of the dynamic resistance on the temperature is studied in detail. The relationship between the junction capacitance and the reverse voltage conforms to the linear slow-transition model. The gate-control diode was used to study the reverse current characteristics at 77K. The results show that for the dipoles of surface potential, the reverse breakdown is determined by the tunneling in the field-inductive junction at the surface.