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本文报道在高水汽压(≈4.1×10~(-5)大气压)、低沉积温度(650℃)下,Ga/AsCl_3/H_2汽相外延系统生长的高纯外延层的实测电参数及其工艺条件。77°K下的迁移率最佳值为211000cm_2/s.V,(44.2°K下)的相应峰值迁移率μ_(max)为329000cm_2/s.V。77°K下的迁移率一般可在120000～200000cm_2/s.V之间重复。高纯外延层还具有低补偿比的突出特点。文中对实验结果也进行了初步讨论。
This paper reports the measured electrical parameters of the high purity epitaxial layer grown by Ga / AsCl_3 / H_2 vapor phase epitaxy at high vapor pressure (≈4.1 × 10 -5) and at low deposition temperature (650 ℃) condition. The best mobility at 77 ° K is 211000 cm 2 / s.V, and the corresponding peak mobility μ max at 44.2 ° K is 329000 cm 2 / s.V. The mobility at 77 ° K can generally be repeated between 120000 ~ 200000cm_2 / s.V. High purity epitaxial layer also has prominent features of low compensation ratio. The article also carried out a preliminary discussion of the experimental results.