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Flexible electrically pumped random laser(RL) based on ZnO nanowires is demonstrated for the first time to our knowledge. The ZnO nanowires each with a length of 5 μm and an average diameter of 180 nm are synthesized on flexible substrate(ITO/PET) by a simple hydrothermal method. No obvious visible defect-related-emission band is observed in the photoluminescence(PL) spectrum, indicating that the ZnO nanowires grown on the flexible ITO/PET substrate have few defects. In order to achieve electrically pumped random lasing with a lower threshold, the metal–insulator–semiconductor(MIS) structure of Au/SiO_2/ZnO on ITO/PET substrate is fabricated by low temperature process. With sufficient forward bias, the as-fabricated flexible device exhibits random lasing, and a low threshold current of ～ 11.5 m A and high luminous intensity are obtained from the ZnO-based random laser. It is believed that this work offers a case study for developing the flexible electrically pumped random lasing from ZnO nanowires.
Flexible electrically pumped random laser (RL) based on ZnO nanowires is demonstrated for the first time to our knowledge. The ZnO nanowires each with a length of 5 μm and an average diameter of 180 nm are synthesized on flexible substrate (ITO / PET) by a simple hydrothermal method. No obvious visible defect-related-emission band is observed in the photoluminescence (PL) spectrum, indicating that the ZnO nanowires grown on the flexible ITO / PET substrate have few defects. In order to achieve electrically pumped random lasing with A lower threshold, the metal-insulator-semiconductor (MIS) structure of Au / SiO 2 / ZnO on ITO / PET substrate is fabricated by low temperature process. threshold current of ~ 11.5 m A and high luminous intensity are obtained from the ZnO-based random laser. It is believed that this work offers a case study for developing the flexible electrically pumped random lasing from ZnO nanowires.