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N沟硅栅MOS晶体管,当对其电离辐照后进行偏置退火时,呈现出正的阈值电压漂移。这可能是由于遂道效应电子通过氧化层并在靠近硅/二氧化硅界面的俘获中心而复合。这种阈值电压漂移在某些情况下很大,足以引起MOS集成电路在功能上失效。
An N-type silicon gate MOS transistor exhibits a positive threshold voltage shift when it is ion-annealed for bias annealing. This may be due to the tunneling effect of electrons recombining through the oxide layer and near the capture center of the silicon / silicon dioxide interface. This threshold voltage drift can in some cases be large enough to cause MOS integrated circuits to functionally fail.