综述了碳化硼材料的主要性能和制备碳化硼薄膜的主要方法,讨论了包括磁控溅射、离子束沉积和化学气相沉积等制备方法的优点及重要工艺参数,并就各方法指出了提高薄膜性能的主要措施,指出制备出更均匀、致密的碳化硼薄膜,提高薄膜与基体间的结合力,降低薄膜应力仍是今后研究的重点。 The main properties of boron carbide and the main methods of preparing boron carbide thin films are reviewed. The advantages and important process parameters of preparation methods including magnetron sputtering, ion beam deposition and chemical vapor deposition are discussed. Performance of the main measures, pointed out that the preparation of a more uniform and dense boron carbide film to improve the binding force between the film and the substrate to reduce the film stress is still the focus of future research.