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通过变温I-V测试方法对中波Si基碲镉汞光伏探测器的深能级进行了研究.首先在产生-复合电流为主导电流机理范围内对Si基碲镉汞探测器的I-1/(kBT)曲线拟合,得到-0.01V偏压下单元Si基碲镉汞器件的深能级Eg/4.然后对不同偏压下的实验数据进行了拟合、比较,发现不同偏压下起主导作用的深能级与该偏压下的暗电流机理有较好的对应关系.最后对-0.01V偏压下不同面积器件的深能级进行了拟合、比较,发现深能级与器件面积关系不大,与理论分析相一致,验证了实验方法的可行性.
The temperature-dependent IV method was used to study the deep-level of the mid-wave Si-based HgCdTe photodetector.Firstly, the effects of I-1 / ( kBT curve fitting to get the deep level Eg / 4 of Si-based HgCdTe device at -0.01V bias.Furthermore, the experimental data under different bias voltages were fitted and compared to find that under different bias voltages The deep level of the dominant function has a good correspondence with the dark current mechanism under the bias voltage.Finally, the deep level of different area devices under the bias of -0.01V is fitted and compared, and it is found that the deep level and the device The area is not related to the theoretical analysis, which verifies the feasibility of the experimental method.