已经给出的同质结或异质结边界条件缺少统一的理论基础,而且由于界面上的晶格结构已不存在严格的周期性,所以一些经典的结果对异质结已不再适用.本文首先对经典的载流于浓度的Boltzmann分布及电流密度方程进行了修正,然后从它们出发建立了一维半导体边界上边界条件的统一理论.最后把这个理论应用于突变异质p-n结,得出了它的边界条件和一些有关的重要结果. The homogenous or heterojunction boundary conditions that have been given lack a uniform theoretical basis and some classical results no longer apply to heterojunction due to the absence of strict periodicity of the lattice structure at the interface. Firstly, the classical Boltzmann distribution and the current density equation are modified, and from them, a uniform theory of the one-dimensional boundary condition on the boundary of the semiconductor is established. Finally, this theory is applied to the mutation heterogeneous pn junction, Its boundary conditions and some related important results.