目前,市场上已可小量买到廉价的1微米栅砷化镓肖特基势垒场效应晶体管V244,这种封装好的器件在8千兆赫下增益为11分贝,噪声系数为4分贝。研制工作已基本完成,最近已提交生产部门生产。特别是研制出一种X波段应用的低接触电阻、低寄生参数的新型带线管壳,以及在 Currently, a small amount of inexpensive 1-micron gate-gallium arsenide Schottky barrier FET V244 is available on the market. The packaged device has a gain of 11 dB at 8 GHz and a noise figure of 4 dB. The research and development work has basically been completed and has recently been submitted to the production department for production. In particular, a new type of low profile, low parasitic parasitic tube package with X-band applications has been developed,