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随着高k金属栅工程在45 nm技术节点上的成功应用,该技术已成为亚30 nm以下技术节点不可缺少的关键模块化工程。同时,如何保证高k金属栅能够在集成过程中得到有效的平坦化,保证器件正常性能也成为了金属后栅工艺的关键技术之一。本文提出的的金属栅反应离子刻蚀+介质再沉积+化学机械平坦化的技术,能够有效对金属栅极进行平坦化,且能避免金属栅极平坦化过程中较大面积区域的“金属过蚀”现象。
With the successful application of high-k metal gate technology in the 45 nm technology node, this technology has become an indispensable key modular project for sub-30 nm technology nodes. At the same time, how to ensure high-k metal gate can be effectively integrated in the process of flattening, to ensure the normal performance of the device has become one of the key technologies of metal gate technology. The proposed metal gate reactive ion etching + dielectric redeposition + chemical mechanical planarization technology can effectively flatten the metal gate, and can avoid the metal gate in the process of planarization of a larger area of the metal Over-eclipse "phenomenon.