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研究了电子束蒸发淀积的非合金膜系Au/Pt/Ti/p-InP(2×1018cm-3)接触的物理特性,通过450℃、4 min的快速退火,获得了欧姆接触,其比接触电阻为7.3×10-5Wcm2。接触电极退火后,采用离子溅射法淀积加厚电极Cr/Au。利用俄歇电子能谱(AES)进行深度剖面分析,表明Pt层能够相对有效地阻挡Au和InP的互扩散,但仍会有少部分的Au穿透Pt层进入InP层;金属与p-InP低阻欧姆接触的形成由界面处金属和InP的化学及其冶金学反应决定,并且少量的In-Au化合物的形成可能有益于接触特性的改善。结果表明,采用合适的退火条件可以制备出低阻、表面光滑、可靠性高的欧姆接触。
The physical properties of Au / Pt / Ti / p-InP (2 × 10 18 cm-3) contact by electron beam evaporation were studied. The ohmic contact was obtained by rapid annealing at 450 ℃ for 4 min. The contact resistance is 7.3 × 10 -5 W cm 2. After the contact electrode is annealed, thickened electrode Cr / Au is deposited by ion sputtering. Depth profile analysis by Auger electron spectroscopy (AES) shows that the Pt layer can relatively effectively block the mutual diffusion of Au and InP, but there is still a small amount of Au penetrating the Pt layer into the InP layer; the interaction of the metal with p-InP The formation of low-resistance Ohmic contacts is determined by the chemical and metallurgical reactions of the metals and InP at the interface, and the formation of small amounts of In-Au compounds may benefit the improvement of the contact characteristics. The results show that the ohmic contact with low resistance, smooth surface and high reliability can be prepared by proper annealing conditions.