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提出了以弱p型(p--GaN)为有源区的p-n结构GaN紫外探测器.由于弱p型层的载流子浓度较低,很容易增加耗尽区的宽度,从而可以增加器件的量子效率.通过模拟计算,研究了金属与p--GaN层的肖特基接触势垒高度、p--GaN层厚度等参数对器件性能的影响.研究结果表明,降低金属与p--GaN层的接触势垒高度、适当减小p--GaN层厚度能够实现有源层方向单一的内建电场,从而提高器件的量子效率.要制备出具有良好性能的p-n结构紫外探测器,必须减小p--GaN层厚度,降低金属与p--GaN层的接触势垒高度.
A pn GaN detector with weak p type (p - GaN) as active region is proposed.It is easy to increase the width of the depletion region due to the low carrier concentration of the weak p - type layer, The quantum efficiency of Schottky barrier layer and the p - GaN layer thickness on the performance of the device are studied by simulation results.The results show that the reduction of metal and p - The contact barrier height of GaN layer and proper reduction of the thickness of p - GaN layer can realize a single built - in electric field in the direction of active layer, so as to improve the quantum efficiency of the device.In order to prepare the pn - structure UV detector with good performance, Decrease the thickness of p - GaN layer and reduce the contact barrier height between metal and p - GaN layer.