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本方法针对SEM+EDX或SEM+WDX仪器的分析方法。本方法根据SEM的二次电子检测器所检测的信息并综合EDX信息加以实现的。令二次电子检测器检测的信息电流为I_s;则:I_s=i_1+i_2+i_3+i_4其中:i_1为入射束流激发样品时产生的纯二次电子电流。i_2为背散射电子电流在SE检测器所张立体角内的部分。i_3为背散射电子以样品表面逸出时产生的纯二次电子电流。i_4为背散射电子在真空壁上和样品支架上产生的纯二次电子电流。控制I_s和dI_s的大小和能量可以改变图像的特征和散射区域。因di_3和di_4远比di_1和di_2小,所以dI_s可以认为由di_1和di_2组成。我们可以用改变di_1/di_2来获取样品的物理、化学性质。综合EDX或WDX提供
This method is for analysis of SEM + EDX or SEM + WDX instruments. The method is based on the information detected by the SEM secondary electron detector and integrated EDX information. Let the secondary electron detector detect the information current is I_s; then: I_s = i_1 + i_2 + i_3 + i_4 Where: i_1 is the pure secondary electron current generated by the incident beam excitation sample. i_2 is the portion of the backscattered electron current within the solid angle of the SE detector. i_3 is the pure secondary electron current produced by backscattered electrons as they escape from the sample surface. i_4 is the pure secondary electron current generated by the backscattered electrons on the vacuum wall and the sample holder. Controlling the size and energy of I_s and dI_s can change the characteristic and scattering area of the image. Since di_3 and di_4 are much smaller than di_1 and di_2, dI_s can be considered as di_1 and di_2. We can change di_1 / di_2 to get the physical and chemical properties of the sample. Integrated EDX or WDX provided