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采用气态源分子束外延方法及应变补偿生长工艺生长了InAsP/InGaAsP应变补偿多量子阱激光器材料，采用选择刻蚀和聚酰亚胺隔离工艺制作成了脊波导型1.3μm激光器芯片并对芯片性能进行了统计测量，测量结果表明此种激光器芯片在室温下的阈值电流可小于10mA，在25oC至90oC温度范围内特征温度大于90K，并表现出较好的单纵模特性。
InAsP / InGaAsP strain-compensated MQW laser materials were grown by gas source molecular beam epitaxy and strain compensated growth. Chirped-waveguide 1.3μm laser chips were fabricated by selective etching and polyimide isolation. The measurement results show that the threshold current of this laser chip can be less than 10mA at room temperature and the characteristic temperature is higher than 90K in the temperature range of 25oC to 90oC.