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The 810-nm InGaAlAs/AlGaAs double quantum well(QW)semiconductor lasers with asymmetric waveg- uide structures,grown by molecular beam epitaxy,show high quantum efficiency and high-power conver- sion efficiency at continuous-wave(CW)power output.The threshold current density and slope efficiency of the device are 180 A/cm~2 and 1.3 W/A,respectively.The internal loss and the internal quantum efficiency are 1.7 cm~(-1)and 93%,respectively.The 70% maximum power conversion efficiency is achieved with narrow far-field patterns.
The 810-nm InGaAlAs / AlGaAs double quantum well (QW) semiconductor lasers with asymmetric wave-structure, grown by molecular beam epitaxy, show high quantum efficiency and high-power conver- sion efficiency at continuous-wave (CW) power output. The threshold current density and slope efficiency of the devices are 180 A / cm ~ 2 and 1.3 W / A, respectively. The internal loss and the internal quantum efficiency are 1.7 cm ~ (-1) and 93% maximum power conversion efficiency is achieved with narrow far-field patterns.