论文部分内容阅读
基于数十年的电源管理创新经验,德州仪器(TI)近日宣布推出一款600V氮化镓(GaN)70mù场效应晶体管(FET)功率级工程样片,从而使TI成为首家,也是唯一一家能够向公众提供集成有高压驱动器的GaN解决方案的半导体厂
Based on decades of experience in power management innovations, Texas Instruments recently announced the availability of a 600-V GaN 70 mΩ field-effect transistor (FET) power stage engineering sample, enabling TI to become the first and only To provide the public with integrated high-voltage drive GaN solutions semiconductor plant