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报道了128×128 Al GaAs/GaAs量子阱红外焦平面探测器阵列的设计和制作.采用金属有机化学气相淀积外延技术生长外延材料,并在GaAs集成电路工艺线上完成工艺制作.为得到器件参数,设计制作了台面尺寸为300μm×300μm的大面积测试器件;77K下2V偏压时暗电流密度为1·5×10-3A/cm2;80K工作温度下,器件峰值响应波长为8·4μm,截止波长为9μm,黑体探测率DB*为3·95×108(cm·Hz1/2)/ W.将128×128元Al GaAs/GaAs量子阱红外焦平面探测器阵列芯片与相关CMOS读出电路芯片倒装焊互连,在80K工作温度下实现了室温环境目标的红外热成像,盲元率小于1%.
The design and manufacture of 128 × 128 Al GaAs / GaAs quantum well infrared focal plane detector arrays are reported.The epitaxial materials are grown by metal organic chemical vapor deposition epitaxy and fabricated on the GaAs IC process line.In order to obtain the device Parameters, designed a large area test device with a mesa size of 300μm × 300μm; a dark current density of 1.5 × 10-3A / cm2 at a bias voltage of 2V at 77K; a peak response wavelength of 8.4μm at an operating temperature of 80K , Cut-off wavelength of 9μm, blackbody detection rate DB * is 3.95 × 108 (cm · Hz1 / 2) / W. The 128 × 128 Al GaAs / GaAs quantum well infrared focal plane detector array chip and the associated CMOS readout Circuit chip flip-chip interconnect, at 80K operating temperature environment to achieve the goal of infrared thermal imaging, blind element rate of less than 1%.