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建立了一种硫钝化GaAs(100)表面的新方法,即CH_3CSNH_2/NH_4OH溶液处理,应用同步辐射光电子能谱(SRPES)和X射线光电子能谱(XPS)表征了该钝化液处理的n-GaAs(100)表面的成键,特性和电子态.结果表明,经过处理的n-GaAs(100)表面,S既与As成键也与Ga成键,形成S与GaAs的新界面,并且Ga和As的氧化物被移走,这标志着CH_3CSNH_2/NH_4OH溶液处理的n-GaAs(100)表面具有明显的钝化作用.钝化表面退火处理,从体态的Ga和As的3d芯能级谱,测得结合能向高端位移了0.22eV,这个值对应钝化引起的能带弯曲效应,意味着硫钝化后n-GaAs(100)表面态密度的降低和解除了因Ga和As的氧化物存在引起的表面费密能级的钉扎.
A new method for the sulfur passivation of GaAs (100) surface was established. The solution of CH_3CSNH_2 / NH_4OH was characterized by SRPES and XPS. -GaAs (100) surface.The results show that on the treated n-GaAs (100) surface, S bonds both with As and with Ga to form a new interface between Ga and SAs, and The removal of Ga and As oxides indicates the obvious passivation of n-GaAs (100) surface treated by CH_3CSNH_2 / NH_4OH solution.A passivated surface annealed from the 3d core energy levels of Ga and As The measured binding energy is shifted to the upper end by 0.22 eV. This value corresponds to the band bending effect caused by passivation, which means the reduction of the surface state density of the n-GaAs (100) after sulfur passivation and the elimination of the oxidation due to Ga and As Pinpoint presence of surface-grained levels of pinning.