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采用阶跃式 Ge H4 流量增加和温度降低的方法 ,在超高真空化学气相淀积系统中生长了线性渐变组份的 Si Ge缓冲层 ,并在其上生长出了驰豫的 Si0 .6 8Ge0 .32 外延层 .俄歇电子能谱证实缓冲层 Ge组份呈线性渐变 .Raman散射谱得出上表层应变驰豫度为 32 % ,与 X射线双晶衍射结果符合得很好 .腐蚀的样品观察到沿两个〈1 1 0〉方向规律性分布、大小和螺旋走向完全一致的位错团密度约为 5× 1 0 7/cm2 .分析了位错团产生的原因
Using a step-up Ge H4 flow rate increase and temperature reduction method, a SiGe buffer layer with a linearly graded composition was grown in an ultra-high vacuum chemical vapor deposition system and a relaxed Si0.68Ge0 .32 Epitaxial layer. Auger electron spectroscopy confirmed that the Ge layer of the buffer layer showed a linear gradient. The Raman scattering spectrum obtained a strain relaxation degree of 32% on the upper surface, which was in good agreement with the X-ray double crystal diffraction results. The distribution of regularity along the two <1 1 0> directions was observed, and the dislocation density was approximately 5 × 10 7 / cm 2. The dislocation clusters were analyzed