日本群马大学工学院用气相法合成粒径仅0.01μ的超微粒碳化硅,纯度达100%。此法用乙炔代替传统法中的甲烷,把甲硅烷和乙炔混合,通过热化学气相淀积法(CVD)合成碳化硅超微粒子,气相反应的温度为1300℃,而使用甲烷的传统法,反应温度在1400℃以上,一般用热化学气相淀积法是很难达到此温度的。气相法能制得致密结构的 Japan Gunma University Institute of Technology gas phase synthesis of ultrafine particles with a particle size of 0.01μ SiC, purity of 100%. In this method, acetylene is used instead of the methane in the conventional method, and the monosilane and acetylene are mixed to synthesize the ultrafine silicon carbide particles through the thermal chemical vapor deposition (CVD) method. The gas phase reaction temperature is 1300 DEG C, and the traditional method using methane, Temperature above 1400 ℃, the general use of thermal CVD is difficult to reach this temperature. Gas-phase method can be made of dense structure