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有机电致发光器件(OLED)具有自发光、低功耗、响应快、亮度高、可视角度大等特点,是下一代理想的显示技术及面光源.当前OLED广泛采用氧化铟锡(ITO)透明阳极兼出光窗口,然而,ITO表面功函数与器件内层有机材料最高电子占有轨道(HOMO)之间的势垒较高,器件工作电压高,导致能效偏低以及稳定性差等问题.射频等离子体处理ITO可获得一定幅度功函数提高(约0.4eV),但仍未达到与有机材料最高电子占有轨道匹配程度,而且,处理效果时效性很短,只有数小时.而采用等离子体浸没式氧离子注入(PIII)技术修饰ITO表面,可精确控制氧离子注入剂量及深度,改变ITO表层氧、铟、锡3种元素原子比例.在不改变ITO薄膜主体透明性及导电性的基础上,表面功函数提高幅度达0.8eV,与主要的OLED空穴输运有机材料的HOMO能级匹配,并且,处理效果经过50h后未见明显衰退迹象.
Organic light-emitting devices (OLEDs) are the next generation of ideal display technologies and surface light sources due to their characteristics of self-luminous, low power consumption, fast response, high brightness and large viewing angle. Currently, OLEDs are widely used in indium tin oxide (ITO) However, the potential barrier between ITO surface work function and the highest electron occupation orbit (HOMO) of the organic material in the inner layer of the device is high, and the working voltage of the device is high, which leads to problems of low energy efficiency and poor stability, etc. The radio frequency plasma However, the work efficiency of ITO was about 0.4eV, but it still did not reach the highest electron occupation orbit matching with organic materials, and the treatment effect was very short and only took a few hours. However, plasma immersion oxygen Ion implantation (PIII) technology modified ITO surface can be precisely controlled oxygen ion implantation dose and depth, change the ITO surface layer of oxygen, indium, tin atomic ratio of the three elements without changing the ITO film on the basis of transparency and conductivity, the surface The work function is increased by 0.8 eV, matching with the HOMO level of the main OLED hole transporting organic material, and no obvious signs of recession are observed after 50 hours.