由于大规模集成电路对硅单晶的质量要求十分严格,其中杂质碳的影响不容忽视。在工艺流程中,为了控制碳的污染,对多晶硅制备还原用电解净化氢气以及单晶硅制备所需的高纯氩气分别采用气相色谱法和浓缩色谱法测定量含碳组分。然而对工艺重要中间产品-SiHCl_3中有机物碳的质量控制犹关重要。国外采用化学法直接测定碳量,但对有机物存在形态未能鉴别。峨嵋半导体材料 Due to the large-scale integrated circuits on the silicon crystal quality requirements are very strict, in which the impact of impurity carbon can not be ignored. In the process, in order to control the pollution of carbon, the reduction of polycrystalline silicon by electrolysis of hydrogen and monocrystalline silicon required for the preparation of high-purity argon gas were measured by gas chromatography and concentration chromatography to measure the amount of carbon-containing components. However, the quality control of organic carbon in SiHCl_3, an important intermediate product of the process, is still of great importance. Foreign direct determination of carbon using chemical methods, but failed to identify the existence of organic matter. Emei semiconductor materials