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利用射频磁控溅射技术,在不同溅射气压下制备了铟锡锌氧化物薄膜晶体管(ITZO TFT),分析了ITZO TFT电学性能随气压的变化规律。研究结果表明:非晶ITZO TFT的工作模式均为耗尽型;随着气压的增大,亚阈值摆幅及阈值电压先减小后增大、场效应迁移率逐渐减小,这是由载流子浓度和界面缺陷密度两方面因素共同决定的。溅射气压为0.4 Pa时,ITZO TFT综合性能最好,场效应迁移率高达24.32 cm~2/V·s,亚阈值摆幅为1.10 V/decade,电流开关比达到10~6。此外,ITZO有源层在可见光范围内的平均透过率超过80%,光学带隙值在3.2~3.4 eV之间,随气压的升高先减小后增大。
Indium tin zinc oxide thin film transistor (ITZO TFT) was fabricated by RF magnetron sputtering at different sputtering pressures. The change of electrical properties of ITZO TFT with pressure was analyzed. The results show that the working mode of amorphous ITZO TFTs is depletion mode. With the increase of pressure, the subthreshold swing and threshold voltage first decrease and then increase, and the field effect mobility decreases gradually The concentration of the interface and the defect density of the interface are determined by both factors. When sputtering pressure is 0.4 Pa, ITZO TFT has the best overall performance, field-effect mobility of up to 24.32 cm 2 / V · s, subthreshold swing of 1.10 V / decade and current switching ratio of 10 -6. In addition, the average transmittance of the ITZO active layer in the visible range is over 80%, and the optical band gap value is between 3.2 and 3.4 eV. The ITZO first decreases and then increases with the increase of the air pressure.