采用脉冲激光沉积方法在ZnO作为缓冲层的InP(100)衬底上制备了高密度ZnO纳米棒阵列.扫描电子显微镜图像显示ZnO缓冲层形成较为均匀的岛状结构,ZnO纳米棒具有垂直于衬底的统一生长方向.X射线衍射测试在34.46°出现尖锐的衍射峰,说明ZnO纳米棒具有(002)择优取向.PL谱在380nm出现强的近带边发射峰,在495nm出现弱的深能级发射峰,表明ZnO纳米棒具有较好的光学性质.本实验制备的高质量ZnO纳米棒阵列有望在现在和未来的纳米器件制作中得到应用. High-density ZnO nanorod arrays were prepared by pulsed laser deposition on InP (100) substrates with ZnO as a buffer layer. Scanning electron microscopy images showed that the ZnO buffer layers formed a uniform island structure with ZnO nanorods perpendicular to the liner X-ray diffraction shows a sharp diffraction peak at 34.46 °, indicating that ZnO nanorods have a (002) preferred orientation.The PL spectrum shows a strong near-band edge at 380 nm and a weak deep at 495 nm Level emission peak, indicating that the ZnO nanorods have better optical properties. The high quality ZnO nanorod arrays prepared in this experiment are expected to be used in the fabrication of nanodevices now and in the future.