用金相显微镜,X光衍射仪和扫描电子显微镜观察分析了用滑块LPE生长的MCT外延层。结果表明外延层中有大量的孪晶、亚晶以及晶界等缺陷,外延层的晶格还存在有扭曲以及大量的应力。对CdTe衬底材料的分析表明:外延层中的上述缺陷与CdTe衬底有一一对应关系。外延层与CdTe衬底的对比分析还表明:除CdTe衬底外,外延生长工艺对外延层质量也有很大影响。 The MCT epitaxial layer grown by the slider LPE was observed with a metallographic microscope, X-ray diffractometer and scanning electron microscope. The results show that there are a lot of defects in the epitaxial layer such as twins, subgrains and grain boundaries, and the lattice of the epitaxial layer is distorted and has a lot of stress. The analysis of the CdTe substrate material shows that the above defects in the epitaxial layer have a one-to-one correspondence with the CdTe substrate. The comparison between the epitaxial layer and the CdTe substrate also shows that the epitaxial growth process has a great influence on the quality of the epitaxial layer besides the CdTe substrate.