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本文讨论了用二氯硅烷外延淀积硅的最新研究结果。附带地也给出了利用二氯硅烷淀积多晶硅和氮化硅膜的结果。当淀积温度改变时,由二氯硅烷外延硅膜的淀积速率的变化是很小的。能够以高淀积速率和在比四氯化硅方法低100℃的温度下,生长出具有良好晶体质量的均匀外延膜。讨论了二氯硅烷与其他硅源相比较在经济上的收益。还给出了关于物理特性和操作技术的资料。
This article discusses the latest research results of epitaxial deposition of silicon with dichlorosilane. Incidentally, the results of depositing polycrystalline silicon and silicon nitride films with dichlorosilane are also given. When the deposition temperature is changed, the change in the deposition rate of the silicon film from the dichlorosilane is small. A uniform epitaxial film with good crystal quality can be grown at a high deposition rate and at a temperature lower by 100 ° C. than the silicon tetrachloride method. The economic benefits of dichlorosilane over other sources of silicon are discussed. Also gives information on physical characteristics and operating techniques.