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8 mil×10 mil InGaN/GaN blue LEDs with indium tin oxide(ITO) emitting at 460 nm were fabricated. A vacuum evaporation technique was adopted to deposit ITO on P-GaN with thickness of 240 nm.The electrical and optical properties of ITO films on P-GaN wafers,as well as rapid thermal annealing(RTA) effects at different temperatures(100 to 550℃) were analyzed and compared.It was found that resistivity of 450℃RTA was as low as 1.19×10~(-4)Ω·cm,along with a high transparency of 94.17%at 460 nm.AES analysis indicated the variation of oxygen content after 450℃annealing,and ITO contact resistance showed a minimized value of 3.9×10~(-3)Ω·cm~2.With 20 mA current injection,it was found that forward voltage and output power were 3.14 V and 12.57 mW.Furthermore,maximum luminous flux of 0.49 lm of ITO RTA at 550℃was measured,which is the consequence of a higher transparency.
A vacuum evaporation technique was taken to deposit ITO on P-GaN with thickness of 240 nm. The electrical and optical properties of ITO (indium tin oxide) were fabricated on an 8 mil × 10 mil InGaN / GaN blue LEDs with indium tin oxide films on P-GaN wafers, as well as rapid thermal annealing (RTA) effects at different temperatures (100 to 550 ° C) were analyzed and compared. It was found that the resistivity of 450 ° C RTA was as low as 1.19 × 10 ~ 4) Ω · cm, along with a high transparency of 94.17% at 460 nm. AES analysis showed the variation of oxygen content after annealing at 450 ° C, and ITO contact resistance showed a minimized value of 3.9 × 10 -3 cm ~ 2.With 20 mA current injection, it was found that forward voltage and output power were 3.14 V and 12.57 mW.Furthermore, maximum luminous flux of 0.49 lm of ITO RTA at 550 ° C was measured, which is the consequence of a higher transparency.