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测量比较了掺Si和未掺杂LEC GaAs晶锭不同部位EL2浓度和位错密度分布。结果表明,掺Si样品中EL2浓度径向分布和位错密度径向分布分别为M形和W形,而未掺杂样品中两者均为W形。讨论了两者间不同对应关系的机理。
The EL2 concentrations and dislocation density distributions at different sites of Si-doped and undoped LEC GaAs boules were measured and compared. The results show that the radial distribution of the EL2 concentration in the Si-doped sample and the radial distribution of the dislocation density are M-shaped and W-shaped, respectively, while both of the undoped samples are W-shaped. Discusses the mechanism of the different correspondence between the two.