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对注S-SI GaAs单晶作光致发光测试,确定了两个缺陷能级.1.239eV峰可能是镓空位(V_(Ga))与S的络合物;1.408eV峰是由注S引起SI-GaAs衬底中残留杂质Si发生迁移,增加了Si受主(Si_(As))密度,部份Si_(As)与砷空位(V_(As))相互作用形成V_(As)-Si_(As)络合物而产生的.
The photoluminescence test of S-SI GaAs single crystal confirmed two defect levels.1.239eV peak may be a complex of gallium vacancy (V_ (Ga)) and S; 1.408eV peak is caused by the injection of S In the SI-GaAs substrate, the residual Si migrates and increases the density of Si acceptor (Si As), and some of the Si As interacted with the arsenic vacancies to form V_As_Si_ As) complex.