论文部分内容阅读
利用Yih－FenyChyan等的PET大注入模型，并考虑了发射极串联电阻RTE和多晶硅／硅界面氧化层延迟时间τox对器件特性的影响，编制了程序。结合实例模拟了在大注入下具有发射区、基区指数掺杂分布的PET的电流增益和频率特性（fT人和fmax）。模拟结果表明，RCA器件（发射区的多晶硅／硅界面氧化层厚度δ=1．4um）的β值高于HF器件（δ=0），但HF器件的fTmax值高于RCA器件。
Using the large injection model of PET, such as Yih-FenyChyan et al., And considering the influence of emitter series resistance RTE and polysilicon / silicon interfacial oxide delay time τox on device characteristics, a program was developed. The current gain and frequency characteristics (fT and fmax) of PET with emission region and exponential doping distribution under large injection were simulated. The simulation results show that the β value of RCA device (polysilicon / Si interface oxide layer thickness δ = 1.4um) is higher than that of HF device (δ = 0), but the fTmax value of HF device is higher than that of RCA device.