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相对于Ⅱ-Ⅵ族二元化合物,三元合金在调节带隙宽度和晶格常数上的灵活性使其应用前景更加广阔,并有希望解决Ⅱ-Ⅵ族材料普遍存在的单极性掺杂难题而成为未来新型光电器件发展的一个重要方向。文章着重介绍了分子束外延(MBE)技术生长ZnSeTe、CdZnTe、CdSeTe等Ⅱ-Ⅵ族三元合金单晶薄膜的研究现状,分析了MBE生长三元合金时需要考虑的问题,介绍了Ⅱ-Ⅵ族半导体材料n/p型掺杂的常用元素和掺杂方式,讨论了限制Ⅱ-Ⅵ族材料有效掺杂的物理机制和三元合金在掺杂方面的研究动态,并对三元合金薄膜的发展前景进行了展望。
Compared with Ⅱ-Ⅵ binary compounds, ternary alloys in the regulation of bandgap width and lattice constants on the flexibility to make it a broader application prospects, and there is hope to solve the ubiquity of Ⅱ-Ⅵ materials unipolar doping Puzzle and become the future development of new optoelectronic devices an important direction. In this paper, the research status of Ⅱ-Ⅵ family of single crystal thin films grown by molecular beam epitaxy (MBE) technology, such as ZnSeTe, CdZnTe and CdSeTe, are emphatically introduced. The problems to be considered when MBE is grown ternary alloy are analyzed. Ⅱ- Ⅵ Family of semiconductor materials n / p doping common elements and doping methods discussed to limit the effective doping Ⅱ-Ⅵ family of materials and the mechanism of ternary alloy doping research trends, and ternary alloy thin film Prospects for the development prospects.