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以正硅酸乙酯 (TEOS)为原料 ,采用旋转涂敷的方法 ,结合溶胶 凝胶技术在硅衬底上制备超低介电常数多孔SiO2 薄膜 采用两种不同的改性方法对薄膜表面进行改性 ,傅里叶变换红外光谱分析发现改性后薄膜中含有大量的—CH3键 ,从而减少了孔洞塌陷 .用扫描电子显微镜观察薄膜的表面形貌 ,发现薄膜内孔洞尺寸在 70— 80nm之间 调节溶胶pH值 ,发现pH值越小凝胶时间越长 对改性样品热处理的结果表明 ,在 30 0℃时介电常数最低达2 0 5 .
Using tetraethylorthosilicate (TEOS) as raw material, spin-coating method and sol-gel technique were used to prepare ultra-low dielectric constant porous SiO2 film on silicon substrate. Two different modification methods were used to modify the surface of the film Modification, Fourier transform infrared spectroscopy analysis found that the modified film contains a large number of -CH3 bond, thereby reducing the collapse of the hole.With a scanning electron microscope to observe the surface morphology of the film and found that the film hole size in the 70-80nm The pH value of the sol was adjusted to find that the lower the pH, the longer the gel time. The results of the heat treatment on the modified samples showed that the dielectric constant was as low as 200 at 300 ℃.