一、引言Ⅲ-V 族化合物半导体材料和器件的研制及应用在过去的十几年中得到了迅速的发展。随着Ⅲ-V 族化合物半导体器件的广泛应用,人们对这些材料的欧姆接触的低阻性、重复性、稳定性和可靠性的要求越来越高。大量的实验结果和理论分析表明:良好的欧姆接触不仅可以改善器件的性能,而且还有利于提高器件的使用寿命。十多年来,人们在这方面做了大量细致的研究工作,取得了许多有用的实验结果。这些结果表明,要想得到低电阻、高可靠的欧姆接触还是器件制作工艺中的一道难题。最近,为获得良好的金属-Ⅲ-V 族化合物半导体欧姆接触,已发展了一些较新的制作工艺。虽然这些工艺还在研究中,但是从发展来看,这 I. INTRODUCTION The development and application of III-V compound semiconductor materials and devices have been rapidly developed over the past decade. With the widespread use of III-V compound semiconductor devices, there is a growing demand for low resistivity, repeatability, stability and reliability of ohmic contacts of these materials. A large number of experimental results and theoretical analysis show that: good ohmic contact not only can improve the performance of the device, but also help to improve the service life of the device. More than a decade, people have done a lot of detailed research in this area, and made many useful experimental results. These results show that in order to obtain low resistance, high reliability ohmic contact device manufacturing process is a problem. Recently, some newer fabrication processes have been developed to obtain good ohmic contact of metal-III-V compound semiconductors. Although these processes are still under study, but from the development point of view, this