论文部分内容阅读
三、霍尔效应传感器 (一)霍尔效应(如图4-13)。在磁场H(安培/米)中以速度v运动的电荷将受到一个机械力这是一个矢量方程,(vH)为矢量积,其大小为vH sin H,其方向垂直于v及H组成的平面,且按右螺旋规则。如果单位体积有n个电荷,则电流I=nqvad安,由于力则得:(a,d′、l为片子尺寸,q为电荷的电量) 式中R=μ_0/nq称为霍尔系数,其单位为亨利·米~2/库仑。另外我们令M为迁移率M=v/E(米~2/伏秒)(E为电场强度,E=v/l)。代入得 即
Third, the Hall effect sensor (A) Hall effect (Figure 4-13). The charge moving at velocity v in a magnetic field H (Ampere / m) will be subjected to a mechanical force. This is a vectorial equation (vH) which is a vector product of size vH sin H perpendicular to the plane of v and H , And according to the right spiral rules. If the unit volume has n charges, the current I = nqvadAn, due to the force is: (a, d ’, l is the size of the film, q is the charge of electricity) Where R = μ_0 / nq is called the Hall coefficient, The unit is Henry Mi ~ 2 / Coulomb. In addition, let M be the mobility M = v / E (m ~ 2 / volt) (E is the electric field strength, E = v / l). Substitute