,Recovery of single event upset in advanced complementary metal-oxide semiconductor static random ac

来源 :中国物理B（英文版） | 被引量 : 0次 | 上传用户：hongtu200909

【作者】

：

Qin Jun-Rui Chen Shu-Ming Liang Bin Liu Bi-Wei

【机构】

：

College of Computer, National University of Defense Technology, Changsha 410073, China

【出处】

：

中国物理B（英文版）

【发表日期】

：

2012年2期

【关键词】

：

single event upset multi-node charge collection static random access memory angu

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