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以AlGaAs/InGaAs/GaAs为基础的十分之一微米栅长PHEMT器件在43GHz下提供了最优良的低噪声性能。测量的室温器件噪声系数为1.32dB(噪声温度=103K),相关增益6.7dB,在17K物理温度下,噪声系数为0.36dB(噪声温度=25K),相关增益为6.9dB,这是目前报道的43GHz下GaAs基器件的最低噪声系数。
One tenth of a micron gate-length PHEMT device based on AlGaAs / InGaAs / GaAs provides the best low noise performance at 43 GHz. The measured noise figure of the room temperature device is 1.32dB (noise temperature = 103K) with a gain of 6.7dB and a noise figure of 0.36dB (noise temperature = 25K) at a physical temperature of 17K with a relative gain of 6.9dB as reported here The lowest noise figure for GaAs based devices at 43GHz.