论文部分内容阅读
采用高分子辅助沉积法在多晶镍衬底上,以氧化镍作为缓冲层,生长了多晶钛酸钡(BaTiO3,BTO)薄膜。对其漏电特性测试及分析发现,在测试电压区间和极性不同时,分别具有不同的漏电机制,可分别用Frankel-Pool emission,space charge limited current(SCLC)与Schottky emission等机制来描述。由于界面缓冲层分解以及界面扩散等原因,BTO/Ni界面呈现Ohmic接触,而Au/BTO界面呈现Schottky势垒接触。通过测量不同温度下的漏电流大小,得到Au/BTO界面的有效势垒为0.32eV,从而得到Au/BTO/Ni能带结构图。利用一阶线性电路模型对其界面电阻与体电阻进行计算,得到的界面电阻与体电阻大小及变化趋势与实验及理论相符合。
Polycrystalline barium titanate (BaTiO3, BTO) thin films were grown on polycrystalline nickel substrates with nickel oxide as a buffer layer by polymer-assisted deposition. The test and analysis of leakage characteristics show that there are different leakage mechanisms when the test voltage interval and polarity are different, which can be described by Frankel-Pool emission, space charge limited current (SCLC) and Schottky emission respectively. The BTO / Ni interface presents Ohmic contact and the Au / BTO interface exhibits Schottky barrier contact due to the interface buffer layer decomposition and interface diffusion. By measuring the leakage current at different temperatures, the effective barrier of Au / BTO interface is 0.32eV, and the Au / BTO / Ni band structure is obtained. The first-order linear circuit model is used to calculate the interfacial resistance and the bulk resistance. The interfacial resistance, the bulk resistance and the trend of the variation are consistent with the experimental and theoretical results.