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利用螺旋波等离子体增强化学气相沉积 (HWP CVD)技术 ,以SiH4 和N2 为反应气体进行了氮化硅 (SiN)薄膜沉积 ,并研究了实验参量对薄膜特性的影响 .利用傅里叶变换红外光谱、紫外—可见光谱和椭偏光检测等技术对薄膜的结构、厚度和折射率等参量进行了测量 .结果表明 ,采用HWP CVD技术能在低衬底温度条件下以较高的沉积速率制备低H含量的SiN薄膜 ,所沉积的薄膜主要表现为Si—N键合结构 .采用较低的反应气体压强将提高薄膜沉积速率 ,并使薄膜的致密性增加 .适当提高N2 SiH4 比例有利于薄膜中H含量的降低 .
Silicon nitride (SiN) thin films were deposited by using SiH 4 and N 2 as reactant gases by using helical plasma enhanced chemical vapor deposition (HWP CVD) technique, and the effects of experimental parameters on the properties of the films were investigated. Fourier transform infrared The structure, thickness and refractive index of the films were measured by UV-VIS, UV-visible spectroscopy, ellipsometry, etc. The results show that the HWP CVD can be used to prepare low-temperature substrates with high deposition rates H content of the SiN film, the deposition of the film mainly for the Si-N bonding structure using a lower reaction gas pressure will increase the film deposition rate, and to increase the density of the film.Proper increase of N2 SiH4 ratio is conducive to the film H content decreased.