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高纯多晶硅中的痕量杂质能够影响多晶硅的少子寿命,影响多晶硅的光学电学性能,所以,检测控制多晶硅中痕量杂质是保证多晶硅质量的重要指标。为保证高纯多晶硅中痕量元素的检测准确性,对实验过程中涉及到的水、容器、温湿度等因素进行研究,以确定这些因素的影响。结果表明:使用聚四氟乙烯材质的容器能够降低空白值,使用Milli-Q制水机制出的超纯水中的杂质比厂区生产的纯水低等。同时,对实验容器的清洗,溶剂的选择,人员的优化提出了相应的控制措施,确保所用的器皿、试剂等不受污染,尽量减小空白值。
Trace impurities in high-purity polycrystalline silicon can affect the minority-lifetime of polycrystalline silicon and affect the optical electrical properties of polycrystalline silicon. Therefore, detecting and controlling trace impurities in polycrystalline silicon is an important index for ensuring the quality of polycrystalline silicon. In order to ensure the detection accuracy of trace elements in high purity polycrystalline silicon, the factors such as water, container, temperature and humidity involved in the experiment were studied to determine the influence of these factors. The results showed that the use of polytetrafluoroethylene containers can reduce the blank value, the use of Milli-Q water system made of ultra-pure water impurities in the water lower than the factory production. At the same time, the corresponding control measures are put forward for the cleaning of the experimental container, the selection of the solvent and the optimization of the personnel to ensure that the used containers, reagents and the like are not contaminated and the blank value is minimized.