The commercialization of lithium niobate on insulator (LNOI) wafer has resulted in significant on-chip photonic integration application owing to its remarkable photonic,acousto-optic,electro-optic,and piezoelectric nature.In recent years,a variety of high-performance on-chip LNOI-based photonic devices have been realized.In this study,we developed a 1-mol％ erbium-doped lithium niobate crystal and its LNOI on a silicon substrate and fabricated an erbium-doped LNOI microdisk with high quality factor (～ 1.05×105).C-band laser emission at ～1530 and ～1560 nm (linewidth 0.12 nm) from the high-Q erbium-doped LNOI microdisk was demonstrated with 974-and 1460-nm pumping,with the latter having better thermal stability.This microlaser would play an important role in the photonic integrated circuits of the lithium niobate platform.