论文部分内容阅读
据《Semiconductor World》1992年第8期报道,松下电器公司开发了分辨率达到0.25μm的KrF准分子激光光刻技术。该公司采用了新开发的化学增大型正性光刻胶和防反射工艺。获得了0.25μm的分辨率,1.0μm的焦深,图形线宽变动精度为±10％的结果。 化学增大型光刻胶的主要成分是碱可溶性苯乙烯树脂和光氧发生剂。通过对苯乙烯树脂的改良使准分子波长248nm的1μm厚度透射率从原来的17％提高到67％;表示光刻胶性能的γ值实现了3.5(原来为2.3)的高对比度;光氧发生剂使灵敏度由原来的30mJ/cm~2提高到15 mJ/cm~2。此外,随着溶解速度的加快,分辨率也有所提高。这样即使使用低孔径(NA=0.42)的准分子激光步进机,也可得到垂直状0.25μm图形和1μm的焦深。
According to “Semiconductor World” No. 8 of 1992, Matsushita Electric Industrial Co., Ltd. developed KrF excimer laser lithography with a resolution of 0.25 μm. The company uses newly developed chemically amplified positive resist and anti-reflection process. A resolution of 0.25 μm, a depth of focus of 1.0 μm, and a variation accuracy of ± 10% in line width of the pattern were obtained. The major components of chemically amplified photoresists are alkali-soluble styrene resins and photo-oxygen generators. By improving the styrene resin, the 1 μm thickness transmissivity of the excimer wavelength of 248 nm was increased from 17% to 67%; the γ value representing the photoresist performance achieved a high contrast of 3.5 (formerly 2.3); the photo-oxygen generation The sensitivity of the agent increased from 30 mJ / cm 2 to 15 mJ / cm 2. In addition, the resolution increases as the dissolution speed increases. This made it possible to obtain a vertical 0.25 μm pattern and a depth of focus of 1 μm even with an excimer laser stepper of low aperture (NA = 0.42).