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利用射频磁控溅射两步法分别在玻璃和p型单晶Si衬底上制备ITO/Ti W双层薄膜。采用紫外-可见分光光度计、四探针测试仪和X射线衍射仪表征ITO/Ti W双层薄膜的光学性能、电学性能和结晶性能,用吉时利2400表和线性传输线模型测试ITO/Ti W双层薄膜与p-Si接触的I-V曲线以及比接触电阻。结果表明Ti W薄膜厚度为8 nm时,ITO/Ti W双层薄膜的光电性能最优,还发现Ti W薄膜的引入有利于ITO薄膜的晶粒长大。ITO薄膜与p-Si之间插入Ti W层可以改善接触性能,ITO/Ti W(8 nm)与p-Si接触的比接触电阻最低为4.1×10-4Ω·cm2。
The two-step RF magnetron sputtering method was used to prepare ITO / TiW double-layer thin films on glass and p-type single-crystal Si substrate respectively. The optical, electrical and crystallographic properties of ITO / TiW bilayer films were characterized by UV-Vis spectrophotometer, four-probe tester and X-ray diffractometer. The ITO / Ti The IV curve of the double-walled thin film in contact with p-Si and the specific contact resistance. The results show that when the thickness of Ti W film is 8 nm, the photoelectric properties of the ITO / TiW double layer film are optimal. It is also found that the introduction of TiW film is beneficial to the grain growth of the ITO film. The interfacial adhesion between the ITO thin film and the p-Si can improve the contact performance. The lowest specific contact resistance of ITO / Ti W (8 nm) to p-Si is 4.1 × 10-4Ω · cm2.